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KMM5364005BSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4

KMM5364005BSW_492601.PDF Datasheet


 Full text search : 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4


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SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
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GSI Technology
GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 7ns 512K x 8 4Mb asynchronous SRAM
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
MOTOROLA INC
GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A 1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44
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GSI Technology, Inc.
M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储
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意法半导
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